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L6220 L6220N
QUAD DARLINGTON SWITCHES
.TWONONI .OUTPUTVOLTAGEUPTO50V .OUTPUTCURRENTUPTO1. .VERYLOWSATURATI .TTLCOMPATI .I
NVERTING + TWO INVERTING INPUTS WITH INHIBIT 8A ON VOLTAGE BLE INPUTS NTEGRAL FAST RECIRCULATION DIODES
Powerdip 12 + 2 + 2 (Plastic Package) ORDERING NUMBER : L6220
DESCRIPTION The L6220 monolithic quad darlington switch is designed for high current, high voltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common inhibit input. All inputs are TTL-compatible for direct connection to logic circuits. Each switch consists of an open-collector darlington transistor plus a fast diode for switching applications with inductive loads. The emitters of the four switches are commoned. Any number of inputs and outputs of the same device may be paralleled. Two versions are available : the L6220 mounted in a Powerdip 12 + 2 + 2 package and the L6220N mounted in a 15-lead Multiwatt package. PIN CONNECTIONS (top views)
L6220 (Powerdip)
Multiwatt 15 (Plastic Package) ORDERING NUMBER : L6220N
L6220N (Multiwatt-15)
April 1993
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PIN FUNCTIONS (see block diagram)
Name IN 1 IN 2 OUT 1 OUT 2 CLAMP A IN 3 IN 4 OUT 3 OUT 4 CLAMP B INHIBIT Vs GND Input to Driver 1 Input to Driver 2 Output of Driver 1 Output of Driver 2 Diode Clamp to Driver 1 and Driver 2 Input to Driver 3 Input to Driver 4 Output of Driver 3 Output of Driver 4 Diode Clamp to Driver 3 and Driver 4 Inhibit Input to all Drivers Logic Supply Voltage Common Ground Function
BLOCK DIAGRAM
TRUTH TABLE
Inhibit L L H
For each input : H = High level L = Low level
Input 1, 4 H L X
Power Out ON OFF OFF
Inhibit L L H
Inputs 2, 3 L H X
Power Out ON OFF OFF
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ABSOLUTE MAXIMUM RATINGS
Symbol Vo Vs VIN, VINH IC IC IC Top Tstg Isu b Ptot Ouput Voltage Logic Supply Voltage Input Voltage, Inhibit Voltage Continuous Collector Current (for each channel) Collector Peak Current (repetitive, duty cycle = 10 % ton = 5 ms) Collector Peak Current (non repetitive, t = 10 s) Operating Temperature Range (junction) Storage Temperature Range Output Substrate Current Total Power Dissipation at at at at Tpins Tcase Tamb Tamb = = = = 90oC o 90 C o 70 C o 70 C (Powerdip) (Multiwatt) (Powerdip) (Multiwatt) Parameter Value 50 7 Vs 1.8 2.5 3.2 - 40 to + 150 - 55 to + 150 350 4.3 20 1 2.3 A A A C C mA W W W W Unit V V
THERMAL DATA
Symbol R th j-pins Rth j-case Rth j-amb Parameter Thermal Resistance Junction-pins Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Max. Powerdip 14 80 Multiwatt-15 3 35 Unit
o o o
C/W C/W C/W
ELECTRICAL CHARACTERISTICS Refer to the test circuits Fig. 1 to Fig.9 (VS = 5V, Tamb = 25oC unless otherwise specified)
Symbol VS Is VCE (sus) ICEX VCE (sat ) Parameter Logic Supply Voltage Logic Supply Current Output Sustaining Voltage Output Leakage Current Collector Emitter Saturation Voltage (one output on ; all others off.) All Outputs ON, IC = 0.7A All Outputs OFF IC =100mA, VINH = VINHH VCE = 50V, VIN 1.4 = VINHH Vs = 4.5V, VIN 2.3 = VINL VINH = VINHL IC = 0.6A IC = 1A IC = 1.8A 46 1 Test Conditions Min. 4.5 Typ. Max. 5.5 20 20 Unit V mA MA V mA V 1 1.2 1.6 0.8 VIN = VINL, VINH = VINHL 2.0 VIN = VINH, VINH = VINHH VR = 50V, VINH = VINHH IF = 1A IF = 1.8A Vp = 5V, R L = 10 Vp = 5V, R L = 10 VIN = 5V, VEN = 5V Iout = - 300mA for each Channel 10 100 1.6 2.0 2 5 120 - 100 V A V A A V V s s mA
VINL, VINHL IINL, IINHL VINH, VINHH IINH, IINHH IR VF td (on) td (off) Is
Input Low Voltage Input Low Current Input High Voltage Input High Current Clamp Diode Leakage Current Clamp Diode Forward Voltage Turn on Delay Time Turn off Delay Time Logic Supply Current Variation
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TEST CIRCUITS (X) = Referred to Multiwatt package X = Referred to Powerdip package Figure 1 : Logic Supply Current.
Set V 1 = 4.5V, V 2 = 0.8V, V INH = 4.5V or V 1 = 0.8V, V 2 = 4.5V, V INH = 0.8 for IS (all outputs off). Set V 1 = 2V, V 2 = 0.8V, V INH = 0.8V for IS (all outputs on).
Figure 2 : Output Sustaining Voltage.
Figure 3 : Output Leakage Current.
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Figure 4 : Collector-emitter Saturation Figure 5 : Logic Input Characteristics.
Set Set Set Set
S 1, S 2 open, V IN, V INH = 0.8V for I IN L, I INH L S 1, S 2 open, V IN, V INH = 2V for I IN H, I INH H S 1, S 2 close, V IN, V INH = 0.8V for V IN L, V INH L S 1, S 2 close, V IN, V INH = 2V for V IN H, V INH H.
Figure 6 : Clamp Diode Leakage Current.
Figure 7 : Clamp Diode Forward Voltage.
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Figure 8 : Switching Times Test Circuit. Figure 9 : Switching Times Waveforms.
Figure 10 : Collector Saturation Voltage versus Collector Current
Figure 11 : Free- wheeling Diode ForwardVoltage versus Diode Current
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Figure 12 : Collector Saturation Voltage versus Junction Temperature at IC = 1A Figure 13 : Free-wheeling Diode Forward Voltage versus Junction Temperature at If = 1A
Figure 14 : Collector Saturation Voltage versus Junction Temperature at IC = 1.8A
Figure 15 : Free-wheeling Diode Forward Voltage versus Junction Temperature at IF = 1.8A
Figure 16.
Figure 17 : Unipolar Stepper Motor Driver.
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APPLICATION INFORMATION When inductive loads are driven by L6220/N, a zener diode in series with the integral free-wheeling diodes increases the voltage across which energy stored in the load is discharged and therefore speeds the current decay (Fig. 16). For reliability it is suggested that the zener is chosen so that Vp + Vz < 35 V. The reasons for this are two fold : 1) The zener voltage changes in temperature and current. Figure 18 : Allowed Peak Collector-current versus Duty Cycle for 1, 2, 3 or 4 Contemporary Working Outputs (L6220).
2) The instantaneouspower must be limited to avoid the reverse second breakdown. The particular internal logic allows an easier full step driving using only two input signals.
Figure 19 : Allowed Peak Collector Cur-rent versus Duty Cycle for 1, 2, 3 or 4 Contemporary Working Outputs (L6220N).
MOUNTING INSTRUCTION The Rth j-amb of the L6220 can be reduced by soldering the GND pins to a suitable copper area of the printed circuit board (Fig. 20) or to an external heatsink (Fig. 21). The diagram of figure 22 shows the maximum dissipable power Ptot and the Rth j-amb as a function of the side " " of two equal square copper areas hav-
ing a thickness of 35 (1.4 mils). During soldering the pins temperature must not exceed 260 C and the soldering time must not be longer than 12 seconds. The external heatsink or printed circuit copper area must be connected to electrical ground.
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Figure 20 : Example of P.C. Board Copperarea which is used as Heatsink Figure 21 : External Heatsink Mounting Example
Figure 22 : Maximum Dissipable Power and Junction to Ambient Thermal Resistance versus Side ""
Figure 23 : Maximum Allowable Power Dissipation versus Ambient Temperature
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MULTIWATT15 PACKAGE MECHANICAL DATA
DIM. MIN. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 22.1 22 17.65 17.25 10.3 2.65 4.2 4.5 1.9 1.9 3.65 4.3 5.08 17.5 10.7 0.49 0.66 1.14 17.57 19.6 20.2 22.6 22.5 18.1 17.75 10.9 2.9 4.6 5.3 2.6 2.6 3.85 0.870 0.866 0.695 0.679 0.406 0.104 0.165 0.177 0.075 0.075 0.144 0.169 0.200 0.689 0.421 1.27 17.78 1 0.55 0.75 1.4 17.91 0.019 0.026 0.045 0.692 0.772 0.795 0.890 0.886 0.713 0.699 0.429 0.114 0.181 0.209 0.102 0.102 0.152 0.050 0.700 mm TYP. MAX. 5 2.65 1.6 0.039 0.022 0.030 0.055 0.705 MIN. inch TYP. MAX. 0.197 0.104 0.063
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POWERDIP16 PACKAGE MECHANICAL DATA
DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 17.78 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 20.0 0.346 0.100 0.700 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.787 0.055 inch TYP. MAX.
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT (R) is a Registered Trademark SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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